This invention relates to a method for manufacturing SiC nanowires on the surface of C/C composite, which comprises the steps of: (1) polishing the C/C composite, washing with distilled water, and drying; (2) binding the treated C/C composite with carbon fibers, and suspending in a vertical chemical vapor deposition furnace; (3) evacuating the furnace, pumping Ar into the furnace to normal pressure, and repeating for three times; (4) applying electricity, heating, and pumping H2 for pretreatment; (5) adjusting the flow rates of Ar, H2 and methyl trichlorosilane when the furnace temperature reaches the predetermined deposition temperature, keeping the temperature for deposition, the turning off the power and cooling naturally to obtain a layer of SiC nanowires on the surface of the material. The method has such advantages as simple process, no additive, low deposition pressure and temperature. The morphology and purity of the synthesized SiC nanowires can be effectively controlled by adjusting the deposition factors. |