The invention discloses to a polymer (p-benzanil ethenylidene) (PPV) used to form the buffer layer of film transistor, which can be represented with formula 1: wherein, R is C11-C20 silicyl group that replaced by the cyclohexyl or phenyl; m is the integer from 2-4; n is the integer from 1-3,000. The invention comprises halogenated fore-body polymer, photo-induced alkali generator and solvent; said film transistor comprises: the buffer layer prepared from PPV compound. The invention also provides a panel display with said film transistor, while the buffer layer with image can be formed by the optical etch image of silicon PPV fore-body, under the organic semi-conductive layer of organic TFT, therefore, the positioning of organic semi-conductive layer and the character of organic TFT can be improved. |