Original document(19 pages)  中文版
    The invention discloses a semiconductor device and its manufacturing method. The memory device includes a gate structure comprising a metal nitride material in a charge storing layer on a semiconductor substrate. The gate structure is disposed between a first dopant region and a second dopant region formed on the semiconductor substrate. The metal nitride material is structured to function as a trap site for trapping a charge.
Application Number
申请号		 200610051480 Application Date
申请日		 2006.02.28
Title 名称 Memory device, semiconductor device and method of manufacturing the same
Publication Number
公开号		 1832204 Publication Date
公开日		 2006.09.13
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/792,H01L21/336
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Jeon Sang-hun, Kim Chung-woo, Hwang Hyun-sang
Attorney & Agent 代理人 tao fengbei hou yu

  
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