Original document(20 pages)  中文版
    A self-aligned silicide (salicide) process is used to form a metal salicide for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An insulator layer is deposited over the pixel array of the image sensor. Portions of the insulator layer are removed using a photoresist mask and a metal layer is deposited. The photoresist mask protects the photosensitive regions of the image sensor. The metal layer is annealed to form a metal silicide.
Application Number
申请号		 200610054902 Application Date
申请日		 2006.02.14
Title 名称 Salicide process for image sensor
Publication Number
公开号		 1832140 Publication Date
公开日		 2006.09.13
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/822,H01L21/3205
Applicant(s) Name
申请人		 Omnivision Tech Inc.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 dai jianbei

  
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