| Original document(31 pages) 中文版 |
The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient. |
Application Number
申请号 |
200610004164 |
Application Date
申请日 |
2006.02.21 |
| Title 名称 |
Method of manufacturing interconnection structure and interconnection structure forming by thereof
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Publication Number
公开号 |
1832128 |
Publication Date
公开日 |
2006.09.13 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/768,H01L23/532 |
Applicant(s) Name
申请人 |
IBM |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Dimitrakopoulos Christos D., Gates Stephen M., Mcgahay Vincent J. |
| Attorney & Agent 代理人 |
wang yonggang |
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