Preparing technology of metal grid/high K-grid medium and preparation method of bimetal grid CMOS

Original document(11 pages) 中文版

This invention provides a preparation method for metal grating/high K grating medium including: carrying out pre-grating process to the substrate, then utilizing MOCVD or ALD technology to deposit a Hf base high K grating medium: utilizing PVD or CVD method to deposit HfN and TaN cover layer orderly, then utilizing a quick heat annealing method to carry out high temperature annealing to the TaN/HfN/Hf base high K grating medium structure, which can get high stability under the secured low EOT(<1nm), then utilizing wet process to eliminate the TaN and HfN cover layers in the high K medium of TaN/HfN/Hf base to prepare a metal grating electrode layer with suitable power function on the medium layer finally to form a reliable metal grating/high K medium structure with the adjustable power function and EOT<1nm.

Application Number 申请号	200610011368	Application Date 申请日	2006.02.24
Title 名称	Preparing technology of metal grid/high K-grid medium and preparation method of bimetal grid CMOS
Publication Number 公开号	1832113	Publication Date 公开日	2006.09.13
Approval Pub. Date		Granted Pub. Date
International Classification 分类号	H01L21/28,H01L21/336,H01L21/8238
Applicant(s) Name 申请人	Beijing Univ.
Address 地址	100871
Inventor(s) Name 发明人	Kang Jinfeng, Liu Xiaoyan, Zhang Xing, Han Ruqi
Attorney & Agent 代理人	jia xiaoling

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