Doped rare earth element gallium oxide type fluorescent substrate material and its prepn. method

Original document(12 pages) 中文版

This invention relates to dope rare earth element gallium oxide fluorescence substrate material used to GaInN group blue light semiconductor epitaxial growth and its preparation method. The substrate single crystal molecular formula is��-Ga2-2x(RE)2xO3, the RE equals to Ce or Tm, x equals to 0.001 to 0.1. The crystal grows by floating zone method. The substrate is propitious to epitaxial growth high quality GaInN group blue semiconductor film, LED can emit white light by it combine with GaInN group blue light.

Application Number 申请号	200610024095	Application Date 申请日	2006.02.23
Title 名称	Doped rare earth element gallium oxide type fluorescent substrate material and its prepn. method
Publication Number 公开号	1831084	Publication Date 公开日	2006.09.13
Approval Pub. Date		Granted Pub. Date
International Classification 分类号	C09K11/80
Applicant(s) Name 申请人	Shanghai Inst. of Optical & Fine Mechanics, Chinese Academy of Sciences
Address 地址	201800
Inventor(s) Name 发明人	Xia Changtai, Zhang Jungang, Xu Jun, Zhou Guoqing, Wu Feng, Pei Guagnqing
Attorney & Agent 代理人	zhang zechun

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