| Original document(39 pages) 中文版 |
An image sensor having improved sensitivity and method for making same include a substrate having an active pixel region with a peripheral circuit region surrounding the active pixel region; a plurality of photo conversion elements disposed in the active pixel region, each photodiode is configured for receiving light through a lens and an opening formed between a plurality of layers of interlayer dielectrics formed on top of each other above the substrate; and a plurality of interconnections electrically connecting to the photo conversion elements disposed within the active pixel region, wherein the distance between the lens and the photo conversion elements is shorter than the distance between the substrate and the top interlayer dielectric in the peripheral circuit region. |
Application Number
申请号 |
200610007030 |
Application Date
申请日 |
2006.02.14 |
| Title 名称 |
Image sensor with improved sensitivity and its production method
|
Publication Number
公开号 |
1828868 |
Publication Date
公开日 |
2006.09.06 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L21/82,H01L21/768,H01L27/146,H01L23/522 |
Applicant(s) Name
申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Wu Te-sack, lee Deuk-min |
| Attorney & Agent 代理人 |
li xiaoshu wei xiaogang |
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