Original document(11 pages)  中文版
    In one embodiment, a method provides a bipolar junction transistor (202) that is coupled to a first power supply (204). A second power supply is utilized to turn on the bipolar junction transistor (202). And, the bipolar junction transistor (202) is overdriven.
Application Number
申请号		 200610005460 Application Date
申请日		 2006.01.18
Title 名称 Transistor antifuse device
Publication Number
公开号		 1828775 Publication Date
公开日		 2006.09.06
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C17/18
Applicant(s) Name
申请人		 Hewlett Packard Development Co.
Address 地址
Inventor(s) Name 发明人 Schulte Donald W., Mcmahon Terry
Attorney & Agent 代理人 yang kai zhang zhicheng

  
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