Original document(31 pages)  中文版
    A semiconductor device (100) may include a substrate (110) and an insulating layer (120) formed on the substrate (110). A first device (710) maybe formed on the insulating layer (120), including a first fin (130). The first fin (130) maybe formed on the insulating layer (120) and may have a first fin aspect ratio. A second device (720) may be formed on the insulating layer (120), including a second fin (130). The second fin (130) may be formed on the insulating layer (120) and may have a second fin aspect ratio different from the first fin aspect ratio.
Application Number
申请号		 200480021176 Application Date
申请日		 2004.07.28
Title 名称 Varying carrier mobility in semiconductor devices to achieve overall design goals
Publication Number
公开号		 1826696 Publication Date
公开日		 2006.08.30
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/786,H01L21/336,H01L27/12
Applicant(s) Name
申请人		 Advanced Micro Devices Inc.
Address 地址
Inventor(s) Name 发明人 Yu Bin, Ahmed Shibly S.
Attorney & Agent 代理人 ge bo cheng wei

  
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