The invention discloses a method for preparing a ZnO/p-type silicon heterojunction UV electroluminescence device, including the steps of: 1) washing p-type deep doped silicon wafer with resistivity 0.005-0.02 ohm.cm and placing the silicon wafer in the reaction chamber of a DC reaction magnetic controlled sputtering device, vacuumizing the reaction chamber to 1510<-3>Pa, using Zn as target material and O2 and Ar as sputtering atmosphere and making sputtering growth at 520Pa and under the substrate temperature of 300deg.C500deg.C to obtain a ZnO film; and 2) sputtering semitransparent electrode on the ZnO film and sputtering Ohm contact electrode on the back side of the P-type silicon substrate. And the method is simple and need not adopt complex molecular beam epitaxy (MBE) or metallic organic chemical vapour deposition or other means. And the used device is compatible with the existing mature silicon device plane process. |