| Original document(41 pages) 中文版 |
An improved reliability of a junction region between a bonding wire and an electrode pad in an operation at higher temperature is presented. A semiconductor device 100 includes a semiconductor chip 102 provided on a lead frame 121, which are encapsulated with an encapsulating resin 115. Lead frames 119 are provided in both sides of the lead frame 121. A portion of the lead frame 119 is encapsulated with the encapsulating resin 115 to function as an inner lead 117. The encapsulating resin 115 is composed of a resin composition that contains substantially no halogen. Further, an exposed portion of the Al pad 107 provided in the semiconductor chip 102 is electrically connected to the inner lead 117 via the AuPd wire 111. |
Application Number
申请号 |
200610009441 |
Application Date
申请日 |
2006.02.22 |
| Title 名称 |
Semiconductor device
|
Publication Number
公开号 |
1825580 |
Publication Date
公开日 |
2006.08.30 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L23/49,H01L23/29 |
Applicant(s) Name
申请人 |
NEC Electronics Corp. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
Ohta Mitsuru |
| Attorney & Agent 代理人 |
chen beng |
| |
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