The invention discloses a method for reducing grooves in shallow groove isolation region in the shallow groove isolation technique: in the course of forming the shallow groove isolation region, removing photoetching glue after etching silicon nitride, and depositing an oxide layer, forming a side wall by anisotropic etching, and protecting the edge of the isolation region with the side wall against the corrosion of hydrofluoric acid so as to reduce or eliminate the grooves, thus reducing active region leakage and parasitic effect caused by grooves and improving IC performance and reliability. |