| Original document(9 pages) 中文版 |
The invention relates to a semi-conductor, which comprises a surface semi-conductor layer whose thickness is 3-200nm without hole defect, and a connect layer under the semi-conductor layer to connect it, while it is made from insulated material. The invention also provides a method for thermally processing the semi-conductor chip, wherein said thermal treatment is processed in 750-1300Deg. C in inert or reduction gas; said gas at least contains the gas compound with semi-conductor material, to deposit the semi-conductor on the surface of semi-conductor layer. And the invention is characterized in that: the thickness of treated semi-conductor layer is nearly same as the un-treated one. |
Application Number
申请号 |
200510137100 |
Application Date
申请日 |
2005.12.23 |
| Title 名称 |
Wafer with semiconductor layer and insolator layer below it, and method therefore
|
Publication Number
公开号 |
1825549 |
Publication Date
公开日 |
2006.08.30 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L21/324,H01L21/762,H01L21/84,C30B33/02 |
Applicant(s) Name
申请人 |
Siltronic AG |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
Dantz Dirk Dr., Huber Andreas Dr., Murphy Brian |
| Attorney & Agent 代理人 |
guo xiaodong |
|
|