Original document(16 pages)  中文版
    A method for operating a page buffer of a nonvolatile memory device includes activating a first latch circuit of the page buffer in a programming operation and inactivating the first latch circuit in a copy-back programming operation. A second latch circuit is activated in both the copy-back programming operation and the programming operation.
Application Number
申请号		 200610005059 Application Date
申请日		 2006.01.17
Title 名称 Method for operating page buffer of nonvolatile memory device
Publication Number
公开号		 1825470 Publication Date
公开日		 2006.08.30
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C7/10,G11C7/00
Applicant(s) Name
申请人		 Hynix Semiconductor Inc.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 di wankui huang xiaolin

  
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