Original document(33 pages)  中文版
    Title: Impurity doping method, impurity doping apparatus and semiconductor device produced by using same
Application Number
申请号		 200480016193 Application Date
申请日		 2004.06.08
Title 名称 Impurity doping method, impurity doping apparatus and semiconductor device produced by using same
Publication Number
公开号		 1806314 Publication Date
公开日		 2006.07.19
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/265,H01L21/22
Applicant(s) Name
申请人		 Matsushita Electric Ind Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Mizuno Bunji, Sasaki Yuichiro, Nakayama Ichiro
Attorney & Agent 代理人 li guiliang yang wu

  
Commodity recycling method
Method and device for introducing foreign substance, and method for mfg. semiconductor device
Production of semiconductor unit
Plasma doping method and plasma doping device
Method for surface treatment and device for making semiconductor device
Method and device for plasma doping
Plasma doping apparatus
Impurity lead-in method and impurity lead-in device
Method and apparatus for liquid etching
Plasma processing method and plasma processing apparatus
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