Original document(29 pages)  中文版
    Title: Dual damascene interconnect structures having different materials for line and via conductors
Application Number
申请号
200480014958 Application Date
申请日
2004.06.14
Title 名称 Dual damascene interconnect structures having different materials for line and via conductors
Publication Number
公开号
1799137 Publication Date
公开日
2006.07.05
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/768
Applicant(s) Name
申请人
IBM
Address 地址
Inventor(s) Name 发明人 Gambino Jeffrey, Cooney Edward III, Stamper Anthony, Motsiff Thomas, Lane Michael
Attorney & Agent 代理人 qin chen

  
Interconnect structures in integrated circuit devices
Nrom semiconductor memory device and fabrication method
Switching device, generator-motor apparatus using switching device, drive system including generator-motor apparatus, and computer-readable recording medium on which a program for directing computer
Integrated heat spreader lid
Thermal interconnect system and method of production thereof
Planar polymer memory device
Termination structures for semiconductor devices and the manufacture thereof
Semiconductor device having an edge termination structure and method of manufacture thereof
Semiconductor device and method for manufacturing same
Filler layer for solar cell module and solar cell module using same
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.