Polycrystalline chip of light emitting diode (LED) is provided first. The chip of LED includes first base plate and polycrystalline layer. Surface of polycrystalline layer of the chip is evened. At least an ohmic contact layer is formed on part of the evened surface. Metal light reflection layer is formed to cover the ohmic contact layer and polycrystalline chip of LED. Barrier to diffusion layer is formed on the metal light reflection layer. Second base plate is jointed to the barrier to diffusion layer, and then first base plate is removed. |