| Original document(17 pages) 中文版 |
A pattern of lead on surface of carrier plate is provided first. Next, a flat layer is formed on the pattern; and an up frame is stuck on surface of the carrier plate to cover the flat layer completely. Central region enclosed by the up frame includes at least a first welding pad and a seat for image-sensing chip. Then, the image-sensing chip including at least one piece of second welding pad is fixed on surface of seat for the image-sensing chip. Finally, using at least one bonding wire connects the first welding pad to the second welding pad; and the method fixes a transparent base plate above the up frame. |
Application Number
申请号 |
200410104157 |
Application Date
申请日 |
2004.12.30 |
| Title 名称 |
Method for fabricating image sensor in CMOS
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Publication Number
公开号 |
1797776 |
Publication Date
公开日 |
2006.07.05 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L27/146,H01L21/50,H01L21/58,H01L21/60,H01L23/12 |
Applicant(s) Name
申请人 |
Nanya Circuit Boards Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Yang Guofeng, Huang Chunjie |
| Attorney & Agent 代理人 |
mu kuailiang |
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