Original document(41 pages)  中文版
    Title: Method for forming storage node of capacitor in semiconductor device
Application Number
申请号		 200510117259 Application Date
申请日		 2005.10.31
Title 名称 Method for forming storage node of capacitor in semiconductor device
Publication Number
公开号		 1794455 Publication Date
公开日		 2006.06.28
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/108,H01L23/522,H01L21/8242,H01L21/768
Applicant(s) Name
申请人		 Hynix Semiconductor Inc.
Address 地址
Inventor(s) Name 发明人 Sun Jun-hyeub, Lee Sung-kwon
Attorney & Agent 代理人 yang gongmei

  
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