Original document(11 pages)  中文版
    A method for measuring photoelectric property of semiconductor nanostructure utilizes accurate space positioning and controlling ability of scan probe microscopic system to use conductive needle point as nanoelectrode and to use back incoming mode to lead pulse laser into region to be tested of sample for exerting structure scanning on sample and simultaneously obtaining optical excited electrical property of specific nanoregion. The device for realizing said method is also disclosed.
Application Number
申请号		 200510111477 Application Date
申请日		 2005.12.14
Title 名称 Equipment and method for measuring photoelectric performance of semiconductor nanometer structure
Publication Number
公开号		 1793874 Publication Date
公开日		 2006.06.28
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G01N23/227,G01N13/00,G01N1/28
Applicant(s) Name
申请人		 Shanghai Inst. of Techanical Physics, CAS
Address 地址 200083
Inventor(s) Name 发明人 Lu Wei, Li Tianxin, Li Zhifeng, Shao Jun, Chen Pingping, Li Ning, Zhang Bo
Attorney & Agent 代理人 guo yang

  
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