Magnetic tunnel junction structures, magnetic random access memory cells employing the same and photomasks used in formation thereof

Original document(32 pages) 中文版

Title: Magnetic tunnel junction structures, magnetic random access memory cells employing the same and photomasks used in formation thereof

Application Number 申请号	200510081709	Application Date 申请日	2005.04.19
Title 名称	Magnetic tunnel junction structures, magnetic random access memory cells employing the same and photomasks used in formation thereof
Publication Number 公开号	1734662	Publication Date 公开日	2006.02.15
Approval Pub. Date		Granted Pub. Date
International Classification 分类号	G11C11/15,H01L43/00,H01L27/22
Applicant(s) Name 申请人	Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人	Young Ki Ha, Lee Jang-eun, Oh Se-chung, Bae Jun-soo, Kim Hyun-jo
Attorney & Agent 代理人	li xiaoshu wei xiaogang

Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods
Ferroelectric memory device and electronic apparatus
Ferroelectric memory device and electronic apparatus
Ferroelectric memory device and its driving method
Circuit for controlling voltage level, bias detection circuit and compensation method
Refresh period generating circuit
Multi-port memory based on dram core
Semiconductor memory device and array internal power voltage generating method thereof
Data exchange circuit and method for synchronous DRAM
Phase change memories and/or methods of programming phase change memories using sequential reset control

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