Original document(5 pages) Authorized document(3 pages) 中文版
    The present invention provides a kind of chemical gas phase deposition technological process for depositing diamond film used in optical and electric fields. It features that the working gas contains high purity oxygen 0.1-10%, high purity methane 0.1-10% and high purity hydrogen for the rest. The pressure of the working gas is 1-100 tau; the micro wave power during the deposition process of diamond film is 100-500 W, The advantages of said invention are simple process and good repeatability, and the invention widens the applicable field of diamond film including optics and electricity.
Application Number
91102584 Application Date
Title 名称 Low temp. deposition fine-particle diamond film by microwave method
Publication Number
1066299 Publication Date
Approval Pub. Date Granted Pub. Date 1996.09.11
International Classification 分类号 C23C16/26,C23C16/48
Applicant(s) Name
Beijing Science & Technology Univ.
Address 地址 100083
Inventor(s) Name 发明人 Jiang Gaosong, Lu Fanxiu
Attorney & Agent 代理人 LIU YUEE

Damp-proof film for potassium chloride diamond
Nickel-based high temp. casting alloy
Smelting of zinc by electric heating
Method for treatment of chromium slag for comprehensive toxicity removal
Recovery of metals from dust of argon/oxygen furnace
Method and equipment for prodn. of snail spiral spring
Quick quenching oil compound
Compounds, named "Leustroducsins", their preparation and their therapeutic uses
Microorganisms and process for producing biotin vitamers using same
Prodn. process of yeast containing nutrition elements
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.