Original document(5 pages) Authorized document(3 pages) 中文版
    The present invention provides a kind of chemical gas phase deposition technological process for depositing diamond film used in optical and electric fields. It features that the working gas contains high purity oxygen 0.1-10%, high purity methane 0.1-10% and high purity hydrogen for the rest. The pressure of the working gas is 1-100 tau; the micro wave power during the deposition process of diamond film is 100-500 W, The advantages of said invention are simple process and good repeatability, and the invention widens the applicable field of diamond film including optics and electricity.
Application Number
申请号
91102584 Application Date
申请日
1991.04.28
Title 名称 Low temp. deposition fine-particle diamond film by microwave method
Publication Number
公开号
1066299 Publication Date
公开日
1992.11.18
Approval Pub. Date Granted Pub. Date 1996.09.11
International Classification 分类号 C23C16/26,C23C16/48
Applicant(s) Name
申请人
Beijing Science & Technology Univ.
Address 地址 100083
Inventor(s) Name 发明人 Jiang Gaosong, Lu Fanxiu
Attorney & Agent 代理人 LIU YUEE

  
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