Original document(16 pages) Authorized document(16 pages) 中文版
    This sensor features use of a silicon film acting as heat insulation, which is suspended over an empty cavity formed on a silicon chip by deducting a hole on it and supported by wall of the cavity. The silicon resistor as heater and the Si/Al thermocouple as heat detector are respectively made on the silicon film which is made up by such technologies as diffusion or ion implantation, silicon epitaxy, anodizing, etching porous silicon, and physical or chemical gas-phase depositing insulating medium. The device made according to this invention has high sensitivity and fast response.
Application Number
申请号
90104888 Application Date
申请日
1990.08.01
Title 名称 Heat-flow sensor of integrated Si-membrane and making method thereof
Publication Number
公开号
1058647 Publication Date
公开日
1992.02.12
Approval Pub. Date Granted Pub. Date 1998.11.04
International Classification 分类号 G01F1/68,G01K17/06
Applicant(s) Name
申请人
Tu Xiangzheng
Address 地址 100009
Inventor(s) Name 发明人 Li Yunyan
Attorney & Agent 代理人 LI TAIMIN

  
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