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ion beam resist
Molecular formula :
CAS :

nature : using focused ion beam sources for exposure of the resist. Because focused ion beam scanning can be induced by radiation chemical reaction, the solid within the scope of the scattering due to large quality electron beam smaller than two orders of magnitude above that there are no proximity effect, ion beam resists can achieve higher electron beam resist resolution (0.05 µ m), for 0 .1 μ m image processing technologies. Usually some of the resist radiation, such as methyl methacrylate, etc. can be used as ion beam resists.


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Structure:
Please see below "More Detailed Data"
More Detailed Data:
1) ion beam resist;ion beam photographic resin
2) ion
3) ion
4) tricylazole;Beam;Bim;Blascide;El-291(Eli-Lilly)
5) Tricyclazole;5-Methyl-1,2,4-triazolo[3,4-b]benzothiazole;Beam;Bim;Blascide;1,2,4-Triazolo[3,4-b]benzothiazole, 5-methyl-
Notice Some description was translated by software and the data is only as a reference.
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